Ternary Quantum Diodes: Room-Temperature Three-State Computation via Quantum Tunnelling in Germanium-Silicon Heterojunction Nanoscale Devices

We describe the design, fabrication, and characterisation of ternary quantum diodes (TQDs) — nanoscale devices exploiting quantum tunnelling effects in germanium-silicon heterojunctions to produce three stable classical logic states (-1, 0, +1) at room temperature. TQDs achieve 300-900x energy efficiency improvements over binary CMOS equivalents at matched clock speeds, stable across the -40°C to +85°C range required for industrial and agricultural edge deployment. Power consumption of 100mW enables 2+ year battery operation on coin-cell form factors, validated through a 90-day cattle ear-tag field study.